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| IXLF 19N250A High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns 5 1 1 2 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25C TC = 90C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 2500 20 32 19 70 1200 250 V V A A A V W Features * High Voltage IGBT - substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays * ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline - UL registered E72873 Applications * switched mode power supplies * DC-DC converters * resonant converters * laser generators, x ray generators * discharge circuits 5 Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.2 4.7 5 0.2 500 100 50 600 250 15 30 2.28 103 43 142 3.9 8 0.15 V V V mA mA nA ns ns ns ns mJ mJ nF pF pF nC 0.5 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres QGon RthJC IC = 19 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 1500 V; IC = 19 A VGE = 15 V; RG = 47 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 1500V; VGE = 15 V; IC = 19 A IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-4 407 IXLF 19N250A Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL 1 mA; 50/60 Hz mounting force with clip Conditions C pin - E pin pin - backside metal with heatsink compound Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 C C V~ N Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 7.0 5.5 0.15 9 mm mm K/W g 2-4 (c) 2004 IXYS All rights reserved 407 IXLF 19N250A 80 A IC TJ = 25C VGE = 17 V 50 15 V A IC 40 30 TJ = 125C VGE = 17 V 15 V 13 V 60 13 V 40 20 11 V 11 V 20 10 9V 9V 0 0 1 2 3 4 VCE 0 5 V 6 0 1 2 3 4 VCE 5 V Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 80 A 70 IC VCE = 20 V 10000 f = 1 Mhz pF Capacitance 1000 Cies 60 50 40 30 20 10 0 6 7 8 9 10 11 12 VGE TJ = 125C 100 Coes Cres TJ = 25C 10 13 14 V 15 0 10 20 30 VCE V 40 Fig. 3 Typ. Transfer Characteristics Fig. 4 Capacitance curves 20 V VCE = 1500 V IC = 19 A TJ = 25C 80 A ICM 15 VGE 60 RG = 47 TJ = 125C VCEK < VCES 10 40 5 20 0 0 50 100 QG 0 150 nC 0 400 800 1200 1600 2000 2400 V VCE 407 Fig. 5 Typ. Gate Charge characteristics (c) 2004 IXYS All rights reserved Fig. 6 Reverse Biased Safe Operating Area RBSOA 3-4 IXLF 19N250A 50 mJ 200 VCE = 1500 V VGE = 15 V RG = 47 TJ = 125C 60 mJ 50 t Eoff VCE = 1500 V VGE = 15 V RG = 47 TJ = 125C ns 160 tr td(on) 120 40 Eon 1200 ns 1000 800 t 600 td(off) 400 200 0 40 30 30 20 10 0 0 Eon 80 20 40 0 10 0 0 Eoff 10 20 30 IC tf 40 A 10 20 30 IC 40 A Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 35 mJ 30 Eon 25 VCE = 1500 V VGE = 15 V IC = 19 A TJ = 125C td(on) 350 ns 300 250 t 200 40 mJ Eoff 30 Eoff VCE = 1500 V VGE = 15 V IC = 19 A TJ = 125C 2000 ns 1500 td(off) 1000 t tr 20 15 10 5 0 0 50 100 150 RG Eon 20 150 100 50 10 tf 500 200 250 0 0 0 50 100 150 RG 200 250 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 1 K/W ZthJC 0.1 Fig. 10 Typ. turn off energy and switching times versus gate resistor single pulse 0.01 0.001 IXLF19N250A 0.01 0.1 t 1 s 10 Fig. 11 Typ. transient thermal impedance 4-4 (c) 2004 IXYS All rights reserved 407 |
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